
IR3103
Half Bridge Electrical Characteristics @T J = 25°C
V CC =V BO =15V and T J =25°C unless otherwise specified. V DD and V IN parameters referenced to COM
Symbol
Parameter
Min
Typ
Max
Units Conditions
V (BR)DSS
I HS-LK
I LS-LK
R DS(ON)
V SD
R DS(ON)
V SD
V BDFM
E ON
E OFF
E TOT
E REC
t RR
E ON
E OFF
E TOT
E REC
t RR
Q G
C OSS
C OSS eff.
SCSOA
I SC
Drain-to-Source Breakdown
Voltage
Low Side Leakage Current
Low Side Leakage Current
Drain-to-Source ON Resistance
Diode Forward Voltage
Drain-to-Source ON Resistance
Diode Forward Voltage
Bootstrap Diode Forward
Voltage Drop
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-ON MOSFET Gate Charge
Output Capacitance
Effective Output Capacitance
Short Circuit Safe Operating
Area
Short Circuit Drain Current
500
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10
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5
80
5
100
1.9
0.8
4.6
0.6
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55
4
59
2
70
85
5
90
6
90
15
12
30
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18.5
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50
105
2.5
0.9
6.5
0.75
1.25
1.10
75
10
85
5
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115
11
126
11
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21
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V
μA
μA
?
V
?
V
V
μJ
μJ
μJ
μJ
ns
μJ
μJ
μJ
μJ
ns
nC
pF
pF
μs
A
V IN =0V, I DD /I O =250μA
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
I O = 0.75A, V IN =5V
I O = 0.75A, V IN =0V
I O = 0.75A, V IN =5V, T J =150°C
I O = 0.75A, V IN =0V, T J =150°C
I F =1A
I F =1A, T J =125°C
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L= 6.3mH
Energy Losses include Body-Diode
Reverse Recovery
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L=6.3mH
T J =150°C
Energy Losses include Body-Diode
Reverse Recovery
V DD =250V, I O =3.2A. Note 5
V DD =400V, f=1MHz. Note 5
V DD =0V to 400V. Note 5,6
T J =150°C, V P =450V,
V + = 320V,V CC =+15V
T J =150°C, V P =450V, t SC <10μs
V + = 320V, V GE =15V, V CC =+15V
Note 5: Characterized on FREDFET die level, not measured at EOL
Note 6: C OSS eff. is a fixed capacitance that gives same charging time as C OSS while V DS is rising from 0 to 80% V DSS .
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