IR3103
Half Bridge Electrical Characteristics @T J = 25°C
V CC =V BO =15V and T J =25°C unless otherwise specified. V DD and V IN parameters referenced to COM
Symbol
Parameter
Min
Typ
Max
Units Conditions
V (BR)DSS
I HS-LK
I LS-LK
R DS(ON)
V SD
R DS(ON)
V SD
V BDFM
E ON
E OFF
E TOT
E REC
t RR
E ON
E OFF
E TOT
E REC
t RR
Q G
C OSS
C OSS eff.
SCSOA
I SC
Drain-to-Source Breakdown
Voltage
Low Side Leakage Current
Low Side Leakage Current
Drain-to-Source ON Resistance
Diode Forward Voltage
Drain-to-Source ON Resistance
Diode Forward Voltage
Bootstrap Diode Forward
Voltage Drop
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-On Energy Losses
Turn-Off Energy Losses
Total Energy Losses
Body-Diode Reverse Recovery
Losses
Reverse Recovery Time
Turn-ON MOSFET Gate Charge
Output Capacitance
Effective Output Capacitance
Short Circuit Safe Operating
Area
Short Circuit Drain Current
500
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
10
---
---
5
80
5
100
1.9
0.8
4.6
0.6
---
---
55
4
59
2
70
85
5
90
6
90
15
12
30
---
18.5
---
50
105
2.5
0.9
6.5
0.75
1.25
1.10
75
10
85
5
---
115
11
126
11
---
21
---
---
---
---
V
μA
μA
?
V
?
V
V
μJ
μJ
μJ
μJ
ns
μJ
μJ
μJ
μJ
ns
nC
pF
pF
μs
A
V IN =0V, I DD /I O =250μA
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
V DS =500V, V IN =0V
V DS =500V, V IN =0V, T J =150°C
I O = 0.75A, V IN =5V
I O = 0.75A, V IN =0V
I O = 0.75A, V IN =5V, T J =150°C
I O = 0.75A, V IN =0V, T J =150°C
I F =1A
I F =1A, T J =125°C
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L= 6.3mH
Energy Losses include Body-Diode
Reverse Recovery
I DD /I O = 0.75A, V DD =300V,
V BO /V CC =15V, L=6.3mH
T J =150°C
Energy Losses include Body-Diode
Reverse Recovery
V DD =250V, I O =3.2A. Note 5
V DD =400V, f=1MHz. Note 5
V DD =0V to 400V. Note 5,6
T J =150°C, V P =450V,
V + = 320V,V CC =+15V
T J =150°C, V P =450V, t SC <10μs
V + = 320V, V GE =15V, V CC =+15V
Note 5: Characterized on FREDFET die level, not measured at EOL
Note 6: C OSS eff. is a fixed capacitance that gives same charging time as C OSS while V DS is rising from 0 to 80% V DSS .
www.irf.com
3
相关PDF资料
IR3519STRPBF IC MOSFET GATE DRIVER SON-8
IR4427STRPBF IC DRIVER DUAL LOW SIDE 8SOIC
IRAM136-1061A2 IC MOSFET DRIVER
IRAMS12UP60A IC MOSFET DRIVER
IRDC3622D BOARD EVAL W/IR3622MPBF DUAL OUT
IRDC3622S BOARD EVALUATION W/IR3622MPBF
IRDC3640 BOARD EVAL SYNC BUCK CONTROLLER
IRDC3651 KIT REF DESIGN SYNCH BUCK REG
相关代理商/技术参数
IR3104 制造商:International Rectifier 功能描述:
IR3104-MK4/A 制造商:TE Connectivity 功能描述:IR-1759 MINIRAY INFRARED HEATING TOOL 制造商:TE Connectivity 功能描述:IR3104-MK4/A
IR311 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:REFLECTIVE NON FOCUSING SENSOR PCB MOUNT
IR313 制造商:EVERLIGHT 制造商全称:Everlight Electronics Co., Ltd 功能描述:Technical Data Sheet 4.7mm Round Non-flange Infrared LED
IR-318A 功能描述:INLET RING FOR UF318 制造商:mechatronics fan group 系列:* 零件状态:新产品 标准包装:10
IR31A 制造商:Knoll Systems 功能描述:Single Infrared Emitter with 3.5mm Plug 制造商:KNOLL SYSTEMS 功能描述:IR REPEATER EMITTER ONLY SINGLE COMPONENT 3.5MM PLUG
IR3220 制造商:IRF 制造商全称:International Rectifier 功能描述:FULLY PROTECTED H-BRIDGE FOR D.C. MOTOR
IR3220S 功能描述:IC H-BRIDGE 45V 6A 20SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 内部开关 系列:- 标准包装:1,000 系列:- 类型:高端/低端驱动器 输入类型:SPI 输出数:8 导通状态电阻:850 毫欧,1.6 欧姆 电流 - 输出 / 通道:205mA,410mA 电流 - 峰值输出:500mA,1A 电源电压:9 V ~ 16 V 工作温度:-40°C ~ 150°C 安装类型:表面贴装 封装/外壳:20-SOIC(0.295",7.50mm 宽) 供应商设备封装:PG-DSO-20-45 包装:带卷 (TR)